Micron, as one of the leading companies in the field of computer memory, has unveiled the new UFS 4.0 memory standard. This technology will be used to store information in devices such as smartphones and tablets and will be available in three sizes: 256 GB, 512 GB and 1 TB. Devices equipped with this memory will be launched in the second half of 2023.
The new UFS 4.0 standard will improve mobile devices and provide improvements in speed and power consumption. Devices equipped with this type of memory will be able to open applications 15% faster, and as a result, you will not have to wait for a long time to run your favorite application or game. On the other hand, these devices will boot 20% faster, which is very significant compared to previous memory standards.
The UFS 4.0 standard will also improve energy consumption, and devices equipped with it will consume 25% less energy. As a result, the battery of these devices will last longer and will not drain quickly.
Another important feature of UFS 4.0 is its data writing speed, which will be much faster than previous standards in this field. The writing bandwidth of this memory, in other words, the speed of storing information in this memory will be 100% faster than the previous generation. Also, the data read bandwidth of this memory is 75% higher than the previous standard. This means that information will be refreshed faster and you will no longer have to wait a long time for images and videos to load.
Overall, UFS 4.0 micron memory technology will make mobile devices faster and more energy efficient. This memory will provide up to 4300 MB/s sequential read speed and up to 4000 MB/s sequential write speed. If we want to compare this with Samsung’s UFS 4.0 memory, we can notice the differences. Samsung memory offers up to 4200 MB/s sequential read speed and up to 2800 MB/s sequential write speed.
In any case, we will have to wait and see when the first devices equipped with UFS 4.0 micron memory technology will be released.
Source: Gizchina
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