Last week, it was reported that the Galaxy S23 FE with the Exynos 2200 chip was spotted on Geekbench. But most of the customers would prefer to see this phone with a Snapdragon chip. Now the website SamMobile has said that another Geekbench benchmark test shows that the American version of this phone will be equipped with the Snapdragon 8 generation 1 chip. This is the same chip used in the Galaxy S22 series.
The 1st generation Snapdragon 8 will be about two years old by the time the Galaxy S23 FE is released and will be as old as the Exynos 2200. However, Samsung’s chip underperforms Qualcomm’s processor, although Samsung is looking to change its approach with the Exynos 2400 chip in the near future.
In previous years, both the Galaxy S20 FE and Galaxy S21 FE were equipped with the same advanced chips used in the non-FE Galaxy S20 and Galaxy S21 models. It looks like Samsung is planning to launch the Galaxy S23 FE with the Exynos 2200 chip in all markets except the US this year, and in the US it will be powered by the 1st generation Snapdragon 8.
This phone will probably use a 6.4-inch display, 6.8 GB of LPDDR5 RAM and 256/128 GB of UFS 3.1 internal memory. Also, its camera system will include a 50-megapixel main camera with a Samsung ISOCELL GN3 sensor, a 12-megapixel Sony IMX258 ultra-wide camera and an 8-megapixel telephoto camera with 3x optical zoom. Its selfie camera will also be a 12-megapixel sensor. The power source of this phone is expected to be a 4500 mAh battery with a fast charging speed of 25W.
Source: PhoneAr
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